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OmniVision: 2nd-Gen BSI sensor leads in low-light sensitivity
OmniVision Technologies claims its OmniBSI-2 architecture “represents a major milestone in digital imaging technology,” with the first 1.1-micron backside illumination pixel.
The sensors will enable new imaging solutions with superior image quality and low-light sensitivity, the company says, as well as better pixel layout, better isolation, and significantly reduced crosstalk.
The architecture also extends OmniVision’s pixel roadmap to sub-micron levels, and serves as a key enabler in the continuous miniaturization of digital imaging technology, with a lower z-height for ultra-thin products.
OmniVision says the OmniBSI-2 is the first pixel built on a 300-mm copper process at 65 nm design rules developed in cooperation with its strategic manufacturing partner Taiwan Semiconductor Manufacturing Company Limited (TSMC). By combining custom 65 nm design rules and new manufacturing process modules, the 1.1-micron OmniBSI-2 pixel achieves industry-leading low-light sensitivity as well as significantly reduced dark current and full-well capacity — all yielding in better image quality, enhanced color reproduction and improved camera performance, the company says.
